I-V model
Channel charge and mobility, which are the two key factors influencing the I-V characteristics.
The drift current components due to the electric field E.
The diffusion current components due to the carrier concentration gradient.
Channel Charge Density Model
Mobility Model
Piece-wise mobility models
The scattering mechanisms responsible for the surface mobility include phonons, coulombic scattering, and surface roughness scattering。
The physical meaning of E eƒƒ can be interpreted as the average electrical field experienced by the carriers in the inversion layer.