FMMT413
SOT23 NPN silicon planar avalanche transistor
Summary
V(BR)CES = 150V, V(BR)CEO = 50V, IUSB = 25A
Description
The FMMT413 is a NPN silicon planar bipolar transistor optimized foravalanche mode operation. Tight process control and low inductancepackaging combine to produce high current pulses with fast edges, idealfor laser diode driving.
Features
•••
Avalanche mode operation50A peak avalanche currentLow inductance packaging
CBApplications
•••
Laser LED driversFast edge generationHigh speed pulse generators
EECTape width(mm)
88
Quantity per
reel
5003,000
Ordering information
DeviceFMMT413TDFMMT413TA
Reel size (inches)
77
BPinout - top viewDevice marking
413
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FMMT413
Absolute maximum ratings
Parameter
Collector-base voltageCollector-emitter voltageEmitter-base voltage
Peak pulse current (25ns Pulse Width)Continuous collector current Power dissipation at Tamb =25°CLinear derating factor
Operating and storage temperature range
SymbolBVCBOBVCEOBVEBOICMICPDTj, Tstg
Limit15050650100330-55 to +150
Unit
VVVAmAmW°C
Thermal resistance
ParameterJunction to ambient
SymbolR⍜JA
Limit378
Unit°C/W
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FMMT413
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltageCollector-emitter breakdown voltageEmitter-base breakdown voltage
Collector cut-off currentEmitter cut-off current
SymbolBVCBOBVCESBVCEOBVEBOICBOIEBO
Min.150150506
100100150
Typ.
Max.
UnitVVVVnAnAmV
IC = 100AIC = 10mAIE = 100AVCB = 120VVEB = 4VIC = 10mA, IB = 1mAIC = 10mA, IB = 1mA
VC=110V, CCE=4.7nF (*)VC=130V, CCE=4.7nF(*)IC = 10mA, VCE = 10V
2.51502
nHMHzpF
Standard SOT23 leads
IC = 10mA, VCE = 5V, f = 20MHzVCB = 10V, IE = 0, f = 1MHzConditions
Collector-emitter saturation VCE(sat)voltage
Base-emitter saturation voltage
Current in second breakdown (pulsed)
VBE(sat)IUSB
2225
Static forward current transfer ratioCollector-emitter inductance
Transition frequencyOutput capacitance
hFELcefTCOBO
50
800mV
AA
NOTES:
(*)Measured with a circuit possessing an approximate loop inductance of 12nH.
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FMMT413
Typical characteristics
I(USB) - Avalanche current (A)5040CCE=2x4.7nF3020TAMB=25°CIB=5mA/nsp.r.f.=10kHzCCE=4.7nFCCE=2.2nFCCE=1.0nF100050100150200250VS - Supply voltage (V) Issue 3 - March 2006
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FMMT413
Intentionally left blank
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FMMT413
Package outline - SOT23
LHND3 leadsGMBACKFDim.ABCDFG
MillimetersMin.2.671.20-0.370.085
Max.3.051.401.100.530.15
InchesMin.0.1050.047-0.0150.0034
Max.0.1200.0550.0430.0210.0059
Dim.HKLMN-
MillimetersMin.0.330.012.100.45-Max.0.510.102.500.64-
InchesMax.0.0130.00040.0830.018-Max.0.0200.0040.09850.025-
0.95 NOM0.0375 NOM
1.90 NOM0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, ChaddertonOldham, OL9 9LLUnited Kingdom
Telephone: (44) 161 622 4444Fax: (44) 161 622 4446hq@zetex.com
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied orreproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.Issue 3 - March 2006
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