专利名称：Capacitors and Methods of Manufacture
Thereof
发明人：Martin Ostermayr,Richard Lindsay申请号：US12127576申请日：20080527
公开号：US20090294820A1公开日：20091203
专利附图：
摘要：Semiconductor devices, capacitors, and methods of manufacture thereof aredisclosed. In one embodiment, a method of fabricating a capacitor includes forming a firstmaterial over a workpiece, and patterning the first material, forming a first capacitor
plate in a first region of the workpiece and forming a first element in a second region ofthe workpiece. A second material is formed over the workpiece and over the patternedfirst material. The second material is patterned, forming a capacitor dielectric and asecond capacitor plate in the first region of the workpiece over the first capacitor plateand forming a second element in a third region of the workpiece.
申请人：Martin Ostermayr,Richard Lindsay
地址：Feldkirchen DE,Beacon NY US
国籍：DE,US
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