DMN4031SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON) max 31mΩ @ VGS = 10V
40V
50mΩ @ VGS = 4.5V
5.6A
ID max
TA = 25°C (Note 5)
7.0A
Features and Benefits
• Low On-Resistance • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • \"Green\" Device (Note 2) • Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SO-8 • Case Material: Molded Plastic, \"Green\" Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 • Weight: 0.072 grams (approximate)
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
• Motor control • Backlighting • Power Management Functions • DC-DC Converters
SO-8
S2
G2 S1 G1 TOP VIEW TOP VIEW Internal Schematic
D2D2D1D1Ordering Information (Note 3)
Part Number DMN4031SSD-13
Notes:
Case SO-8 Packaging 2500/Tape & Reel
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN4031SSD
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Document number: DS35410 Rev. 3 - 2
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DMN4031SSDMaximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units 40 V Drain-Source Voltage VDSS
±20 V Gate-Source Voltage VGSS
TA = 25°C Steady 5.2
A ID Continuous Drain Current (Note 4) VGS = 10V
State 4.1 TA = 70°C Continuous Drain Current (Note 4) VGS = 4.5V Continuous Drain Current (Note 5) VGS = 10V Continuous Drain Current (Note 5) VGS = 4.5V Pulsed Drain Current (Note 6)
Steady State Steady State Steady State
TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C
ID ID ID IDM
4.3 3.4
7.0
5.6
A A
5.8
A
4.7
20 A Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units 1.42 W Total Power Dissipation (Note 4) PD
88 °C/W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) RθJA
2.6 W Total Power Dissipation (Note 5) PD
48 °C/W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) RθJA
Operating and Storage Temperature Range -55 to +150 °C TJ, TSTG
Electrical Characteristics TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
ON CHARACTERISTICS (Note 7) Gate Threshold Voltage On-state drain current
Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance
Reverse Transfer Capacitance Gate resistance
Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
Symbol BVDSS IDSS IGSS VGS(th) ID(ON) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd TD(on) Tr TD(off) Tf
Min Typ Max Unit Test Condition
40 - - V VGS = 0V, ID = 10mA - - 1 μA VDS = 40V, VGS = 0V - - ±100 nA VGS = ±20V, VDS = 0V 1.6 2.4 3.0 V VDS = VGS, ID = 250μA 20 - - A VGS = 10V, VDS = 5A - 19 31 VGS = 10V, ID = 6A
mΩ
- 44 50 VGS = 4.5V, ID = 5A - 11 - S VDS = 5V, ID = 6A - 0.74 1.0 V VGS = 0V, IS = 1A - 945 - pF VDS = 20V, VGS = 0V,
- 69 - pF f = 1.0MHz
- 58 - pF - 1.45 - Ω VDS = 0V, VGS = 0V,f = 1.0MHz - 8.4 - nC VGS = 10V, VDS = 20V, - 18.6 - nC ID = 12A
- 3.3 - nC
- 2.2 - nC - 6.4 - ns - 9.7 - ns VGS = 10V, VDS = 20V,
RL= 1.6Ω, RG= 3Ω - 19.8 - ns - 3.1 - ns 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. The value in any given application depends on user’s specific board design 5. Device mounted on 1” x 1” FR-4PCB with high coverage 1 oz. Copper, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. No subject to production testing.
DMN4031SSD
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Document number: DS35410 Rev. 3 - 2
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30253025ID, DRAIN CURRENT (A)DMN4031SSDVDS = 5.0V ID, DRAIN CURRENT (A)20VGS = 10V2015VGS = 4.5V151010TA = 150°CTA = 125°CTA = 85°CTA = 25°CTA = -55°C5VGS =3.5VVGS = 4.0V50000.51.01.5VDS, DRAIN -SOURCE VOLTAGE(V)Fig. 1 Typical Output Characteristics2.01234VGS, GATE-SOURCE VOLTAGE (V)Fig. 2 Typical Transfer Characteristics5RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω)0.090.080.070.060.050.040.030.020.0100510152025ID, DRAIN SOURCE CURRENT (A)Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)0.100.060.05VGS= 4.5V0.04TA = 150°CTA = 125°CTA = 85°C0.030.02TA = 25°CTA = -55°C0.0100510152025ID, DRAIN SOURCE CURRENT (A)Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)1.60.060.05RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized)1.40.041.20.03VGS =10VID =10A1.00.020.80.010-50VGS = 10VID = 5A0.6-50-250255075100125150TJ, JUNCTION TEMPERATURE (°C)Fig. 5 On-Resistance Variation with Temperature-250255075100125150TJ, JUNCTION TEMPERATURE (°C)Fig. 6 On-Resistance Variation with Temperature
DMN4031SSD
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Document number: DS35410 Rev. 3 - 2
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3.0VGS(TH), GATE THRESHOLD VOLTAGE(V)2.5DMN4031SSD20 16IS, SOURCE CURRENT (A)2.0121.581.00.50-504-250255075100125150TA, AMBIENT TEMPERATURE (°C)Fig. 7 Gate Threshold Variation vs. Ambient Temperature000.20.40.60.81.0VSD, SOURCE-DRAIN VOLTAGE (V)Fig. 8 Diode Forward Voltage vs. Current1.210,0001,000TA = 150°CCT, JUNCTION CAPACITANCE (pF)IDSS, LEAKAGE CURRENT (µA)1,000Ciss100TA = 125°C100Coss10TA = 85°CCrssf = 1MHzTA = 25°C1005101520253035VDS, DRAIN-SOURCE VOLTAGE (V)Fig. 9 Typical Junction Capacitance40102030VDS, DRAIN-SOURCE VOLTAGE(V)Fig. 10 Typical Drain-Source Leakage Current vs. Voltage1010100RDS(on)LimitedVGS, GATE-SOURCE VOLTAGE (V)8f = 1MHz10ID ,DRAIN CURRENT (A)DC61PW = 10sPW = 1sPW = 100msPW = 10msPW = 1msPW = 100µsPW = 10µs40.120.01002468101214161820Qg, TOTAL GATE CHARGE (nC)Fig. 11 Gate-Charge Characteristics0.0010.1110VDS, DRAIN-SOURCE VOLTAGE (V)Fig. 12 SOA, Safe Operation Area100DMN4031SSD
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Document number: DS35410 Rev. 3 - 2
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DMN4031SSDPackage Outline Dimensions
E1EA1L0.254Gauge PlaneSeating PlaneDetail ‘A’hA2AA3eDb7°~9°45°Detail ‘A’SO-8
Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 0° 8° θ
All Dimensions in mm
Suggested Pad Layout
XC1C2YDimensions
X Y C1 C2 Value (in mm)
0.60 1.55 5.4 1.27
DMN4031SSD
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Document number: DS35410 Rev. 3 - 2
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DMN4031SSD IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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Document number: DS35410 Rev. 3 - 2
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