Manufacturing method of array substrate

专利名称：Manufacturing method of array substrate发明人：Zhanfeng Cao,Seongyeol Yoo,Qi Yao申请号：US13458478申请日：20120427公开号：US09190429B2公开日：20151117

专利附图：

摘要：A manufacturing method of an array substrate, comprising the following steps:S1 forming a gate signal line and a gate electrode on a base substrate, successivelydepositing a gate insulating layer, an active layer, and a metal layer, faulting a maskformed of photoresist on the metal layer, and removing the metal layer outside a region

for forming a data line and source/drain electrodes through the mask; S2. simultaneouslyetching the active layer and ashing the photoresist so as to expose the metal layer withina channel region; S3. etching the active layer exposed by the photoresist after beingashed after the step S2; S4. removing the metal layer within the channel region.

申请人：Zhanfeng Cao,Seongyeol Yoo,Qi Yao

地址：Beijing CN,Beijing CN,Beijing CN

国籍：CN,CN,CN

代理机构：Ladas & Parry LLP

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