1302芯片规格书(8#)

GA1302 N-Channel Junction Silicon FET Capacitor Microphone Applications

Features

¾ ¾ ¾ ¾

Especially suited for use in audio, telephone capacitor microphones Excellent voltage characteristic Excellent transient characteristic Adoption of FBET process

Wafer SPEC

Characteristic

Wafer Diameter

Chip Size(include scribe line) Gross Die

Wafer Thickness

Front Metal/Thickness Back Metal/Thickness PAD Size

Scribe Line Grid Wafer to edge size

Description 8 Inch

270um x 280um

398,451 200um±10um

Al/4um

Au/0.5um Ag/1.0um 85um x 85um

80um 3.5mm

Absolute Maximum Ratings (Ta=25℃)

Characteristic

Gate to Drain Voltage Gate Current

Allowable Power Dissipation Junction Temperature Storage Temperature

Symbol VGDO IG PD Tj Tstg

Rating

Unit

-20 V 10 mA 100 mW 125 ℃

-55 to +125 ℃

Electrical Characteristics (Ta=25℃)

Characteristic

Gate Drain Voltage Drain Current Cutoff Voltage

Forward Transfer Admittance

Symbol Test Condition Min Typ Max Unit V（BR）GDOIG=-100µA -20 -30 - V IDSS VDS=5V, VGS=0 150 400 uA VGS(OFF) VDS=5V, ID=1uA -0.4 V |yfs| VDS=5V, VGS=0, f=1kHz 1.5 mS Ciss VDS=5V, VGS=0, f=1kHz 3.5 pF Crss VDS=5V, VGS=0, f=1kHz 0.65 pF GV Vin=10mV, f=1kHz TBD db Zin f=1kHz 25 MΩ Zo f=1kHz TBD Ω VNO Vin=0 A Curve -113 dB

Input Capacitance Output Capacitance Voltage Gain Input Resistance Output Resistance Output Noise Voltage

Chip Drawing

Drain

Source

1

上海国旌电子科技有限公司 Confidential ID-VDS

ID-VDS (IDSS=101uA)4.00E-043.50E-043.00E-04Drain Current, ID-A2.50E-042.00E-041.50E-041.00E-045.00E-050.00E+00012345678910Drain to Source Voltage,VDS-V0.20.10-0.1-0.2-0.3-0.4-0.5-0.6

ID-VDS(Idss=198uA)6.00E-04

5.00E-040.2Drain Current,ID-A4.00E-040.10-0.13.00E-04-0.2-0.3-0.42.00E-04-0.5-0.61.00E-040.00E+00012345678910Drain to Source Voltage,VDS-V

IDS-VDS(Idss=322uA)8.00E-047.00E-046.00E-04Drain Current, ID-A5.00E-044.00E-043.00E-042.00E-041.00E-040.00E+00012345678910Drain to Source Voltage,VDS-V

0.20.10-0.1-0.2-0.3-0.4-0.5-0.6

2