Method for making a device comprising transistors

专利名称：Method for making a device comprising

transistors strained by an external layer, anddevice

发明人：NEMOUCHI, FABRICE,GERGAUD,

PATRICE,POIROUX, THIERRY,PREVITALI,BERNARD

申请号：EP12181053.5申请日：20120820公开号：EP2562803A1公开日：20130227

专利附图：

摘要：The method involves forming a stress layer (130) on respective gate blocks oftwo types of transistors and respective sets of semiconductor areas (115, 116, 125, 126)located on both sides of the respective gate blocks, where the stress layer is made ofdielectric material e.g. silicon nitride. A sacrificial layer is provided between the stresslayer and one of the sets of semiconductor areas. Openings (141, 143, 145, 147) crossingthe stress layer are formed, where two of the openings reveal the sacrificial layer. Thesacrificial layer is removed by etching through the two openings. An independent claim isalso included for a transistors integrated microelectronic device.

申请人：COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES

地址：Bâtiment \"Le Ponant D\" 25, rue Leblanc 75015 Paris FR

国籍：FR

代理机构：Ilgart, Jean-Christophe

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