专利名称：IN-SITU STEAM GENERATED OXYNITRIDE发明人：Sotirios ATHANASIOU,Laurence VALLIER申请号：US17228190申请日：20210412
公开号：US20210317559A1公开日：20211014
专利附图：
摘要：A method of forming an oxide layer in an in-situ steam generation (ISSG)process, including providing a silicon substrate in a rapid thermal process (RTP) chamberand injecting a gas mixture into the RTP chamber. The method further includes heating asurface of the silicon substrate to a reaction temperature, so that the gas mixture reacts
close to the surface to form steam and thereby oxidize the silicon substrate to form theoxide layer on the surface, and wherein the gas mixture comprises hydrogen (H), oxygen(O) and nitrous oxide (NO).
申请人：Sotirios ATHANASIOU,Laurence VALLIER
地址：Corbeil-Essonnes FR,Chevilly-Larue FR
国籍：FR,FR
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