Method of forming semiconductor device including s

专利名称：Method of forming semiconductor device

including silicide layers

发明人：Hung-Ming Chen,Chih-Hao Chang,Chih-Hao

Yu

申请号：US14192742申请日：20140227公开号：US09214558B2公开日：20151215

专利附图：

摘要：A method includes forming a gate structure on a semiconductor materialregion, wherein the gate structure includes spacer elements abutting a gate electrode

layer. The gate electrode layer is etched to provide a recess. A hard mask layer is formedover the gate electrode layer in the recess. Silicide layers are then formed on a sourceregion and a drain region disposed in the semiconductor material region, while the hardmask is disposed over the gate electrode layer. A source contact and a drain contact isthen provided, each source and drain contact being conductively coupled to a respectiveone of the silicide layers.

申请人：Taiwan Semiconductor Manufacturing Company, Ltd.

地址：Hsin-Chu TW

国籍：TW

代理机构：Haynes and Boone, LLP

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