GSS9960资料

󰀪󰀷󰀰󰀃󰀃󰀃󰀦󰀲󰀵󰀳󰀲󰀵󰀤󰀷󰀬󰀲󰀱󰀃󰀃GSS9960 Description 󰀃N-CHANNEL ENHANCEMENT MODE POWER MOSFET Pb Free Plating Product ISSUED DATE :2005/03/02 REVISED DATE :2005/09/29B BVDSS 40V RDS(ON) 20m󰂟 ID 7.8A The GSS9960 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low On-Resistance *Fast Switching Speed Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0󰍃 0.40 0.19 6.20 5.00 4.00 8󰍃 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45󰍃 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current3 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 13Symbol VDS VGS ID @TA=25󰐺 ID @TA=70󰐺 IDM PD @TA=25󰐺 Tj, Tstg Ratings 40 󰁦20 7.8 6.2 20 2 0.016 -55 ~ +150 Unit V V A A A W W/󰄇 󰄇 Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-amb Value 62.5 Unit 󰄇/W GSS9960 Page: 1/5 元器件交易网www.cecb2b.com

󰀪󰀷󰀰󰀃󰀃󰀃󰀦󰀲󰀵󰀳󰀲󰀵󰀤󰀷󰀬󰀲󰀱󰀃󰀃 󰀃ISSUED DATE :2005/03/02 REVISED DATE :2005/09/29B Electrical Characteristics(Tj = 25󰄇 Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS 󰏦BVDSS /󰏦Min. 40 - 1.0 - - - - - - - - - - - - - - - - Typ. - 0.032 - 25 - - - - - 14.7 7.1 6.8 11.5 6.3 28.2 12.6 1725 235 145 Max. - - 3.0 - 󰍄100 1 25 20 32 - - - - - - - - - - Unit V Test Conditions VGS=0, ID=250uA Tj V/󰐺 Reference to 25󰐺, ID=1mA V S nA uA uA m󰓨 VDS=VGS, ID=250uA VDS=10V, ID=7A VGS= 󰍄20V VDS=40V, VGS=0 VDS=32V, VGS=0 VGS=10V, ID=7A VGS=4.5V, ID=5A ID=7A VDS=20V VGS=4.5V VDS=20V ID=1A VGS=10V RG=3.3󰓨 RD=20󰓨 VGS=0V VDS=25V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25󰐺) Drain-Source Leakage Current(Tj=70󰐺) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1Symbol VSD IS ISM Min. - - - Typ. - - - Max. 1.3 2.3 20 Unit V A A Test Conditions IS=2.3A, VGS=0V, Tj=25󰐺 VD= VG=0V, VS=1.3V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width󰐉300us, duty cycle󰐉2%. 3. Surface mounted on FR4 board, t󰐉10sec. GSS9960 Page: 2/5 元器件交易网www.cecb2b.com

󰀪󰀷󰀰󰀃󰀃󰀃󰀦󰀲󰀵󰀳󰀲󰀵󰀤󰀷󰀬󰀲󰀱󰀃󰀃Characteristics Curve 󰀃ISSUED DATE :2005/03/02 REVISED DATE :2005/09/29B Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature GSS9960 Page: 3/5 Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation 元器件交易网www.cecb2b.com

󰀪󰀷󰀰󰀃󰀃󰀃󰀦󰀲󰀵󰀳󰀲󰀵󰀤󰀷󰀬󰀲󰀱󰀃󰀃 󰀃ISSUED DATE :2005/03/02 REVISED DATE :2005/09/29B Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature GSS9960 Page: 4/5 元器件交易网www.cecb2b.com

󰀪󰀷󰀰󰀃󰀃󰀃󰀦󰀲󰀵󰀳󰀲󰀵󰀤󰀷󰀬󰀲󰀱󰀃󰀃 󰀃ISSUED DATE :2005/03/02 REVISED DATE :2005/09/29B Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform 󰁹 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. 󰁹 GTM reserves the right to make changes to its products without notice. 󰁹 GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. 󰁹 GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: 󰁹 Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 󰁹 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Important Notice: GSS9960 Page: 5/5