Through wafer vias and method of making same

专利名称：Through wafer vias and method of making

same

发明人：Hanyi Ding,Alvin Jose Joseph,Anthony

Kendall Stamper

申请号：US13604731申请日：20120906公开号：US08518787B2公开日：20130827

专利附图：

摘要：A method of forming and structure for through wafer vias and signal

transmission lines formed of through wafer vias. The method of forming through wafer

vias includes forming an array of through wafer vias comprising at least one electricallyconductive through wafer via and at least one electrically non-conductive through wafervia through a semiconductor substrate having a top surface and an opposite bottomsurface, each through wafer via of the array of through wafer vias extending from the topsurface of the substrate to the bottom surface of the substrate.

申请人：Hanyi Ding,Alvin Jose Joseph,Anthony Kendall Stamper

地址：Essex Junction VT US,Williston VT US,Williston VT US

国籍：US,US,US

代理机构：Schmeiser, Olsen & Watts

代理人：Richard Kotulak

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