专利名称：Method and apparatus for surface treating
of substrates
发明人：Nishizawa, Hisao,Morita, Masaru,Tanaka,
Masato
申请号：EP87109529.5申请日：19870702公开号：EP0252439A3公开日：19891129
摘要：A method for surface treating of thin substrates such as semiconductor wafers,wherein a semiconductor wafer formed with deep and minute trenches on its surface ishorizontally placed on a spinner in a chamber with its trenched surface directed up, andthen ultraviolet light is emitted to the surface of the wafer to dissolve impurities stickingin the trenches, and thereafter etchant is spouted from a nozzle to the trenched surfaceof the wafer being spinned about a vertical axis at a high speed, and next the inside of thechamber is rendered at a lower pressure than atmospheric pressure and the atmosphericpressure is recovered after the lapse of a predetermined time, and thus a series of thesesteps of etchant supplying, pressure reducing, and pressure recovering are carried outuntil the complete entrance of the etchant into the interior surfaces of the trenches iseffected, so as to even or smooth the interior surfaces, and finally the wafer is treatedwith rinsing, and heating and drying.
申请人：Dainippon Screen Mfg. Co., Ltd.
地址：1-1, Tenjinkitamachi Teranouchi-Agaru 4-chome Horikawa-Dori Kamikyo-kuKyoto 602 JP
国籍：JP
代理机构：Goddar, Heinz J., Dr.
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