专利名称：Electrochemical dielectric isolation
technique
发明人：Short, John P.,McLachlan, Craig J.,Messmer,
Charles,Reinecke, Paul S.
申请号：EP84112839.0申请日：19841025公开号：EP0142737A2公开日：19850529
专利附图：
摘要：Plane indicating moats are formed extending through an epitaxial layer into asubstrate simultaneous with the formation of the isolation moats which terminate withinthe epitax- lallayer. The substrate is ground to a predetermined thickness afterformation of the dielectric isolation and support structure. The composite structure isinserted in an etchant with conditions set to electrochemically etch only the substrate.The exposed plane indicating moats are used as a reference for a final polishing step.
申请人：HARRIS CORPORATION
地址：P.O. Box 37 Melbourne, FL 32919 US
国籍：US
代理机构：Wilhelm, Hans-Herbert, Dr.-Ing.
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