专利名称：MEMORY DEVICE AND METHOD FOR
ERASING MEMORY
发明人：Richard Fastow,Krishna Parat,Johnny
Javanifard
申请号：US11170950申请日：20050630
公开号：US20070002620A1公开日：20070104
专利附图：
摘要：A memory array includes a coupled controller for controlling the writing to,reading from and erasure of memory cells and blocks of memory cells within the
memory array. The controller is operable during an erase process to determine andreduce odd/even wordline offset. The controller operates on separately settableodd/even wordline erase voltages, which are adjusted to affect offset.
申请人：Richard Fastow,Krishna Parat,Johnny Javanifard
地址：Cupertino CA US,Palo Alto CA US,Carmichael CA US
国籍：US,US,US
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