Philips SemiconductorsObjective specification
Silicon Diffused Power TransistorBU4522DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variationsresulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOLVCESMVCEOICICMPtotVCEsatICsatVFtf
PARAMETER
Collector-emitter voltage peak valueCollector-emitter voltage (open base)Collector current (DC)
Collector current peak valueTotal power dissipation
Collector-emitter saturation voltageCollector saturation current (Fig 17)Diode forward voltageFall time
CONDITIONSVBE = 0 V
TYP.------76-285t.b.f
MAX.15008001025453.0--2.2400t.b.f
UNITVVAAWVAAVnsns
Ths ≤ 25 ˚C
IC = 7 A; IB = 1.75 Af = 16 kHzf = 64 kHzIF = 7.0 A
ICsat = 7 A; f = 16 kHzf = 64 kHz
PINNING - SOT199
PIN123basecollectoremitterDESCRIPTIONPIN CONFIGURATION
caseSYMBOL
cbRbecaseisolated123eLIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)SYMBOLVCESMVCEOICICMIBIBM-IBMPtotTstgTj
PARAMETER
Collector-emitter voltage peak valueCollector-emitter voltage (open base)Collector current (DC)
Collector current peak valueBase current (DC)
Base current peak value
Reverse base current peak value 1Total power dissipationStorage temperatureJunction temperature
CONDITIONSVBE = 0 V
MIN.---------55-MAX.1500800102569645150150
UNITVVAAAAAW˚C˚C
Ths ≤ 25 ˚C
1 Turn-off current.
July 19981Rev 1.000
元器件交易网www.cecb2b.com
Philips SemiconductorsObjective specification
Silicon Diffused Power TransistorBU4522DF
THERMAL RESISTANCES
SYMBOLRth j-hsRth j-a
PARAMETERJunction to heatsinkJunction to ambient
CONDITIONS
with heatsink compoundin free air
TYP.-35
MAX.2.8-UNITK/WK/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specifiedSYMBOLVisolCisol
PARAMETER
Repetitive peak voltage from allthree terminals to externalheatsink
CONDITIONS
R.H. ≤ 65 % ; clean and dustfree
MIN.--TYP.-22
MAX.2500-UNITVpF
Capacitance from T2 to externalf = 1 MHzheatsink
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specifiedSYMBOLICESICESBVEBORbe
VCEOsustVCEsatVBEsathFEhFEVF
PARAMETER
Collector cut-off current 2
Emitter-base breakdown voltageBase-emitter resistance
Collector-emitter sustaining voltageCollector-emitter saturation voltageBase-emitter saturation voltageDC current gainDiode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmaxVBE = 0 V; VCE = VCESMmax;Tj = 125 ˚CIB = 600 mAVEB = 7.5 V
IB = 0 A; IC = 100 mA;L = 25 mH
IC = 7 A; IB = 1.75 AIC = 7 A; IB = 1.75 AIC = 1 A; VCE = 5 VIC = 7 A; VCE = 5 VIF = 7 A
MIN.--7.5-800-0.85-4.2-TYP.--13.550--0.94105.8-MAX.1.02.0---3.01.03-7.32.2
UNITmAmAVΩVVVV
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specifiedSYMBOL
PARAMETER
Switching times (16 kHz linedeflection circuit)Turn-off storage timeTurn-off fall time
Switching times (64 kHz linedeflection circuit)Turn-off storage timeTurn-off fall time
CONDITIONS
f = 16 kHz; ICsat = 7 A; IB1 = 1.4 A;(IB2 = -3.5 A)f = 64 kHz;
t.b.ft.b.f
t.b.ft.b.f
µsns
TYP.
MAX.
UNIT
tstftstf
3.52854.3400µsns
2 Measured with half sine-wave voltage (curve tracer).
July 19982Rev 1.000
元器件交易网www.cecb2b.com
Philips SemiconductorsObjective specification
Silicon Diffused Power TransistorBU4522DF
MECHANICAL DATA
Dimensions in mmNet Mass: 5.5 g15.3 max0.77.33.13.36.25.821.5max3.25.2 maxo45seatingplane3.515.7min12.1 max231.21.05.453.5 maxnot tinned0.7 max0.4M2.05.45Fig.1. SOT199; The seating plane is electrically isolated from all terminals.Notes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8\".
July 19983Rev 1.000
元器件交易网www.cecb2b.com
Philips SemiconductorsObjective specification
Silicon Diffused Power TransistorBU4522DF
DEFINITIONS
Data sheet statusObjective specificationProduct specificationLimiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information
Where application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.This data sheet contains final product specifications.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.
July 19984Rev 1.000
因篇幅问题不能全部显示，请点此查看更多更全内容