TiCN with reduced growth defects using HiPIMS

专利名称：TiCN with reduced growth defects using

HiPIMS

发明人：クラポブ，デニス,クラスニッツァー，ジークフ

リード

申请号：JP2018555190申请日：20170421公开号：JP2019513903A公开日：20190530

专利附图：

摘要：The present invention relates to a method of applying a coating comprising atleast one TiCN layer to the surface of a substrate to be coated using HiPIMS, whichmethod comprises depositing TiCN to deposit at least one TiCN layer. Using at least oneTi target as a Ti source to form a layer, the Ti target is sputtered in a coating chamber in

a reactive atmosphere using the HiPIMS method, the reactive atmosphere comprising atleast one diluted In order to reduce growth defects during deposition of the at least oneTiCN layer, this reactive atmosphere additionally comprises a second reactive gas, whichcomprises a gas, preferably argon, and at least nitrogen gas as the reactive gas. As acarbon-containing gas, preferably CH 4, used as a carbon source to form a TiCN layer,TiCN At least one graphite target is used as a carbon source to deposit a dipolar biasvoltage on the substrate to be coated or to generate a TiCN layer during deposition ofthe target, and only nitrogen gas as a reactive gas Sputtering using a HiPIMS method in acoating chamber having a reactive atmosphere, wherein the Ti target is preferablyoperated with pulsed power using a first power feeding device or a first power feedingunit, and The graphite target is operated with pulse power using a second power feedingdevice or a second power feeding unit.

申请人：エリコン サーフェス ソリューションズ アーゲー、 プフェフィコン

地址：スイス ８８０８ プフェフィコン クーラーシュトラーセ １２０

国籍：CH

代理人：安達 友和,和田 直斗

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