JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1188 TRANSISTOR (PNP)
FEATURES
z z
Low VCE(sat).
SOT-89 -3L
1. BASE
2. COLLECTOR 1
Complements the 2SD1766
3. EMITTER
2 3
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Symbol Parameter Value Unit -40 V -32 V -5 V -2 A 500 150 -55~150mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain *
Collector-emitter saturation voltage * Transition frequency Output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat)
Test conditions IC=-50μA , IE=0
Min Typ Max Unit-40
V
IC= -1mA , IB=0 -32 V IE=-50μA, IC=0
-5
V μA μA V
VCB=-20 V , IE=0 -1
VEB=-4 V , IC=0 -1 VCE=-3V, IC= -0.5AIC=-2A, IB= -0.2A
VCE=-5V, IC=-0.5A ,f=30MHz VCB=-10V, IE=0 ,f=1MHz
82
390-0.8
fT Cob
100 MHz 50 pF * Measured using pulse current. CLASSIFICATION OF hFE Range
Rank P Q R 82-180 120-270 180-390 Marking BCP BCQ BCR
B,Mar,2012
Typical Characteristics
2SB1188
Static Characteristic
-0.7
COMMON EMITTERT-0.6
a=25℃)A-2.0mA( C-0.5
-1.8mAI T-1.6mANER-0.4
R-1.4mAU C-1.2mA RO-0.3
T-1.0mACELL-0.2
-0.8mAOC-0.6mA-0.1
-0.4mAIB=-0.2mA-0.0
-0-1-2-3-4-5-6COLLECTOR-EMITTER VOLTAGE V CE
(V)V -1000CEsat —— ICNOITAR)UVTmA( -100S tRasEECTVT I M E E-GRATOTa=100 ℃TLCO-10EVLLOTa=25℃Cβ=10-1-1-10-100-1000-2000COLLECTOR CURREMT IC (mA)
IC —— V-2000BE-1000
)Am( CI -100
TN℃E0℃R05R12==UCTaa-10
T ROTCELLO-1
CCOMMON EMITTERVCE= -3V-0.1
-0-200-400-600-800-1000-1200BASE-EMMITER VOLTAGE VBE (mV)
PC —— T 600
a
NO500
ITAPISS400
ID )RWEWm( O 300
PC RPOTC200
ELLOC100
00
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
h1000FE —— ICETFa=100℃h NIATGa=25℃ TNER100R UC CDCOMMON EMITTERVCE= -3V10-5-10-100-1000-2000COLLECTOR CURRENT IC (mA)
V
BEsat —— I
-2000
CNO-1000
I)TVARmT(a=25℃ U T tAasESB RV E T a=100 ℃ TETIGMAET-LEOSVABβ=10-100
-0.1-1-10-100-1000-2000COLLECTOR CURREMT IC (mA)
Cob/Cib —— VCB/VEB300
f=1MHzCIibE=0/IC=0100Ta=25 ℃)Fp( CCob ECNA TICA10PAC1-0.1-1-10-20REVERSE VOLTAGE V (V)
B,Mar,2012
【南京南山半导体有限公司 — 长电三极管选型资料】www.nscn.com.cnSymbolAbb1cDD1EE1ee1LDimensions In MillimetersMin.Max.1.4001.6000.3200.5200.4000.5800.3500.4404.4004.6001.550 REF.2.3002.6003.9404.2501.500 TYP.3.000 TYP.0.9001.200Dimensions In InchesMin.Max.0.0550.0630.0130.0200.0160.0230.0140.0170.1730.1810.061 REF.0.0910.1020.1550.1670.060 TYP.0.118 TYP.0.0350.047
The bottom gasket
The file folder
Label on the Reel
Plastic bag
1000×1 PCS
The top gasket
Seal the box with the tape Stamp “EMPTY” on the empty box Seal the box with the tape QA Label
Label on the Inner Box
Inner Box: 210 mm× 208 mm×２０３ mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
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