Field effect transistor and related devices

专利名称：Field effect transistor and related devices发明人：Song, Tae Joong,Kim, Gyu Hong,Park, Jae

Ho,Jung, Jong Hoon

申请号：EP13185519.9申请日：20130923公开号：EP2725620A2公开日：20140430

专利附图：

摘要：A fin Field Effect Transistor (finFET) arrangement according to the invention canincludes a source region and a drain region of the finFET, as well as a gate of the finFETcrossing over a fin of the finFET between the source and drain regions. First and second

silicide layers are formed on the source and drain regions respectively. The first andsecond silicide layers include respective first and second surfaces that face the gatecrossing over the fin, where the first and second surfaces have different sizes.

申请人：Samsung Electronics Co., Ltd

地址：129, Samsung-ro Yeongtong-gu Suwon-si Gyeonggi-do 443-742 KR

国籍：KR

代理机构：Patentanwälte Ruff, Wilhelm, Beier, Dauster & Partner

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