FIN FIELD EFFECT TRANSISTOR

专利名称：FIN FIELD EFFECT TRANSISTOR发明人：Feng YUAN,Hung-Ming CHEN,Tsung-Lin

LEE,Chang-Yun CHANG,Clement HsingjenWANN

申请号：US12766233申请日：20100423

公开号：US20110068405A1公开日：20110324

专利附图：

摘要：An exemplary structure for the fin field effect transistor comprises a substratecomprising a major surface; a plurality of fin structures protruding from the major surface

of the substrate, wherein each fin structure comprises an upper portion and a lowerportion separated at a transition location at where the sidewall of the fin structure is atan angle of 85 degrees to the major surface of the substrate, wherein the upper portionhas sidewalls that are substantially perpendicular to the major surface of the substrateand a top surface having a first width, wherein the lower portion has tapered sidewalls onopposite sides of the upper portion and a base having a second width larger than thefirst width; and a plurality of isolation structures between the fin structures, wherein eachisolation structure extends from the major surface of the substrate to a point above thetransition location.

申请人：Feng YUAN,Hung-Ming CHEN,Tsung-Lin LEE,Chang-Yun CHANG,ClementHsingjen WANN

地址：Hsinchu TW,Hsinchu City TW,Hsinchu TW,Taipei TW,Carmel NY US

国籍：TW,TW,TW,TW,US

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