专利名称：Method and apparatus for filling low aspect
ratio cavities with conductive material at highrate
发明人：Bulent M. Basol申请号：US09919788申请日：20010731公开号：US06858121B2公开日：20050222
专利附图：
摘要：The present invention relates to methods and apparatus for plating aconductive material on a substrate surface in a highly desirable manner. The invention
removes at least one additive adsorbed on the top portion of the workpiece more thanat least one additive disposed on a cavity portion, using an indirect external influence,thereby allowing plating of the conductive material take place before the additive fullyre-adsorbs onto the top portion, thus causing greater plating of the cavity portionrelative to the top portion.
申请人：Bulent M. Basol
地址：Manhattan Beach CA US
国籍：US
代理机构：NuTool Legal Department
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