MULTILAYER STRUCTURE AND ITS FABRICATION PROCESS

专利名称：MULTILAYER STRUCTURE AND ITS

FABRICATION PROCESS

发明人：LETERTRE, Fabrice申请号：EP08702336.2申请日：20080128公开号：EP2111633A2公开日：20091028

摘要：The invention relates to a process for fabricating a multilayer structure,comprising at least the following steps : a) epitaxial growth (S1) of a growth layer on asilicon substrate; b) formation of at least one pattern (S2, S3) in the growth layer,- c)deposition of an oxide layer (S5) on the silicon substrate; d) transfer of a silicon activelayer (S7-S10) onto the oxide layer; e) formation of a cavity (S11, S12) in the silicon activelayer and in the oxide layer above each pattern; and f) growth in the cavity of a III-Vmaterial (S14) from each exposed pattern of the growth layer.

申请人：S.O.I.Tec Silicon on Insulator Technologies

地址：Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin FR

国籍：FR

代理机构：Desormiere, Pierre-Louis

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