CHA2190
20-30GHz Low Noise Amplifier
self biased
GaAs Monolithic Microwave IC
Description
The circuit is a two-stages self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
181410 Main Feature
§ Broad band performance 20-30GHz § 2.2dB noise figure
§ 15dB gain, ± 0.5dB gain flatness § Low DC power consumption, 50mA § 20dBm 3rd order intercept point § Chip size : 1.670 x 1.03x 0.1mm
dBSij & NF ( dB )62-2-6-10-14-18-22-2614
16
18
20
22
24
26
28
30
32
34
36
dBS11dBS21dBS22NFFrequency ( GHz )
Main Characteristics On wafer typical measurement
Tamb = +25°C
Symbol Parameter Min Typ Max Unit NF
Noise figure at freq : 40GHz
2.2
3
dB
G Gain ∆G
Gain flatness
13 15 dB
± .0.5
± 1
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref : DSCHA21902036 -05-Feb.-02-
1/9
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
元器件交易网www.cecb2b.com
CHA2190
20-30GHz Low Noise Amplifier
Electrical Characteristics
Tamb = +25°C, Vd = +4V (On wafer)
Symbol Parameter Min Typ Max Unit Fop
Operating frequency range
20
30
Ghz
G Gain (1) ∆G NF VSWRin
Gain flatness (1) Noise figure (1) Input VSWR (1)
13 15 dB
± 0.5 2.2
20
± 1 3 3.0:1 3.0:1
dB dB dBm
VSWRout Ouput VSWR (1) IP3 P1dB Id
3rd order intercept point
Output power at 1dB gain compression (2) Drain bias current (3)
11 dBm
50
70
mA
(1) These values are representative of wafer measurements without bonding wire at the RF ports.
(2)This value is a typical value when Vd=4V Vg1=Vg2=0V or not connected and can be increased
See chip biasing option page 8
(3) This current is the typical value for low noise and low current consumption biasing : Vd=4V , Vg1=Vg2=0V or not connected.
Absolute Maximum Ratings (4)
Tamb = +25°C
Symbol Parameter Vd Vg
Pin Top Tstg
Drain bias voltage (6) Vg1 and Vg2 max
Maximum peak input power overdrive (5) Operating temperature range Storage temperature range
Values Unit 4.5 +1 15 -40 to +85 -55 to +125
V V dBm °C °C
(4) Operation of this device above anyone of these paramaters may cause permanent damage.
(5) Duration < 1s.
(6) See chip biasing options page 8/9
Ref : DSCHA21902036 -05-Feb.-02- 2/9 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 元器件交易网www.cecb2b.com
20-30GHz Low Noise Amplifier
CHA2190
Typical Results
Chip Typical Response ( On wafer Scattering parameters ) : Tamb = +25°C Vd=4V Id=+50mA
FreqGHz2.005.008.009.0010.0011.0012.0013.0014.0015.0016.0017.0018.0019.0020.0021.0022.0023.0024.0025.0026.0027.0028.0029.0030.0031.0032.0033.0034.0035.0036.0037.0038.0039.0040.00dBS11mod.dB-0.37-0.53-0.59-0.66-0.79-1.00-1.26-1.33-1.39-1.79-3.06-5.59-9.90-13.09-14.29-14.48-14.71-14.92-15.42-16.38-16.55-16.33-14.66-13.19-11.49-10.10-8.49-7.01-5.76-4.56-3.67-3.02-2.57-2.18-1.82PS11pha.deg.-74.86-151.19157.19141.20125.32109.3993.1173.8652.9226.36-7.27-46.11-88.64-132.63-179.39143.23118.23100.8087.8078.8977.1577.1271.7461.9546.3825.971.99-24.08-50.88-78.91-103.63-125.99-146.23-162.01-178.56dBS12mod.dB-70.84-61.97-63.84-64.59-62.91-62.00-61.10-54.13-45.84-41.70-38.40-36.52-34.29-34.84-34.82-34.24-33.88-33.65-32.93-32.22-31.63-30.73-30.72-29.96-29.74-29.29-29.08-29.25-28.83-29.98-31.24-31.84-35.07-35.66-36.87PS12pha.deg.-53.91-91.19-162.71167.32152.65165.5165.75-36.78-88.69-126.55-159.80168.18139.94112.2893.3179.4262.7747.7234.9320.453.26-11.52-31.79-45.41-65.11-84.32-104.88-127.09-147.90-177.63165.34144.11127.0798.71109.75dBS21mod.dB-29.15-54.49-21.34-14.41-7.52-1.204.218.6212.1314.8916.8217.5317.3916.9816.4415.9015.5015.3815.3015.2215.2215.2415.2815.2715.2215.1314.9214.4613.7312.6111.099.307.295.363.19PS21pha.deg.56.50149.52-178.25176.87163.27140.92111.9879.0043.657.60-31.20-68.31-102.75-131.32-156.45-179.20160.71141.01121.05101.3481.8361.8141.1420.38-1.31-23.85-47.58-72.54-98.45-124.59-149.58-173.89163.92143.17121.75dBS22mod.dB-2.03-4.15-5.97-6.38-7.07-8.02-9.38-11.25-14.06-16.84-19.09-17.25-16.27-17.29-18.70-21.00-20.27-20.10-17.74-16.09-14.40-13.10-12.13-11.55-11.52-11.39-12.30-13.60-16.45-22.00-20.99-17.26-12.77-10.42-8.88PS22pha.deg.-84.36-155.38161.51149.74136.72124.05111.29101.0092.7090.96106.80106.9897.3975.4349.8223.10-12.66-51.60-76.68-98.65-114.01-131.22-145.23-159.84-175.03171.38155.28135.95111.5375.08-22.73-69.71-88.90-108.31-119.32
Ref : DSCHA21902036 -05-Feb.-02- 3/9 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 元器件交易网www.cecb2b.com
CHA2190
20-30GHz Low Noise Amplifier
Typical Results
Typical Gain , Matching and Noise Figure (On wafer Measurements)
Tamb = +25°C
Vd = 4V Vg1 and Vg2 non connected; Id = 50mA
Typical gain slope versus temperature : -0.025dB/°C
Typical noise figure slope versus temperature : 0.011dB/°C
181410dBS21 & NF ( dB )62-2-6-10-14-18-22-2614
16
18
20
22
24
26
28
30
32
34
36
Frequency ( GHz )
dBS21NFdBS11dBS221814102-2-6-10-14-18-22-26RLosses(dB)120100
Gain: Vd=4V Vg2=-1V6
Chip Typical Response (In test Jig )
24
222018161412108642018
Gain: Vd=4.5V Vg2=+1VGain: Vd=4VGa / NF (dB)80
Id( Vd=4.5V Vg2=+1V)Id (Vd=4V)Id (Vd=4V Vg2=-1V)6040200
NF : (all biasing options)202224262830323436
Frequency (GHz)
Ref : DSCHA21902036 -05-Feb.-02- 4/9 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Id (mA)元器件交易网www.cecb2b.com
20-30GHz Low Noise Amplifier
CHA2190
Circuit typical response (In test-Jig):
Power measurements (Vd=4V)
2119Gain (dB) 17151311-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Input Power (dBm)
GAIN dB(20GHz)GAIN dB(24GHz)GAIN dB(28GHz)GAIN dB(30GHz)GAIN dB(32GHz)POUT dBm (20GHz)POUT dBm (24GHz)POUT dBm (28GHz)POUT dBm (30GHz)POUT dBm (32GHz)151397531-1-3-5
Output Power(dBm)11
Typical Output Power (Measurement in test Jig)
4036P-1dB (dBm) / Gain (P-1dB) dB32282420161284018
19
20
21
22
23
24252627Frequency (GHz)
28
29
30
31
32
P-1dB (Vd=4.5V Vg2=+1V) P-1dB (Vd=4V) P-1dB (Vd=4.5V Vg2=+1V)Gain P-1dB (Vd=4.5V Vg2=+1V)Gain P-1dB (Vd=4V)Gain P-1dB (Vd=4V Vg2=-1V)Id (Vd=4V vg2=-1VId (Vd=4V)Id (Vd=4.5V Vg2=+1V80706050Id (mA)403020100-10-20
Tamb = +25°C
These values are representative of the package assembly with input and output bonding.
Typical Output power –1dB for typical biasing
Ref : DSCHA21902036 -05-Feb.-02- 5/9 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 元器件交易网www.cecb2b.com
CHA2190
20-30GHz Low Noise Amplifier
Mechanical data Chip schematic and Pad Identification Pad Size :100/100µm, chip thickness 100um Dimensions : 1670µm x 1030µm ± 35µm
Ref : DSCHA21902036 -05-Feb.-02- 6/9 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 元器件交易网www.cecb2b.com
CHA2190
20-30GHz Low Noise Amplifier
Typical Chip Assembly
- * Nominal Input and Output bonding lenght :0.3 to 0.38nH for one 25µm bond wire. - Chip backside is DC and RF grounded
Ref : DSCHA21902036 -05-Feb.-02- 7/9 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
元器件交易网www.cecb2b.com
CHA2190
20-30GHz Low Noise Amplifier
Chip Biasing options Internal DC schematic
This chip is self-biased, and flexibility is provided by the access to positive Vg.
The internal DC electrical schematic is given in order to use these pads in a safe way.
Absolute recommandations:
N°1 : Do not exceed Vds = 3.5 Volt ( Vds: internal Drain to Source voltage ).
N°2 : Do not bias in such a way that Vgs* becomes positive. (Vgs :internal Gate to Source voltage )
Typical biasing table and Typical results in test Jig at 40 GHz
40GHz IN TEST Jig
Standard
Low Noise High linearity
Low noise /low current consumptionSwitch off
Vds ( V)Vg1 (V)
44.543.5
NCNCNC-1
Vg2 (V)NC1-1-8
Id (mA)
5060400
Typical NF(dB)Typical Gain (dB)Typical P-1dB (dB)Typical Psat (dB)
2.22.22.2X
151515X
11129.5X
131412X
Ref : DSCHA21902036 -05-Feb.-02- 8/9 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 元器件交易网www.cecb2b.com
20-30GHz Low Noise Amplifier
CHA2190
Ordering Information
Chip form :
CHA2190-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref : DSCHA21902036 -05-Feb.-02- 9/9 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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