MOS-technology power device integrated structure

专利名称：MOS-technology power device integrated

structure

发明人：Grimaldi, Antonio,Schillaci, Antonino,Frisina,

Ferruccio,Ferla, Giuseppe

申请号：EP95830542.7申请日：19951228公开号：EP0782201B1公开日：20000830

摘要：A MOS-technology power device integrated structure comprises a plurality ofelementary functional units formed in a semiconductor material layer (3) of a firstconductivity type. The elementary functional units comprise body stripes (9;90) of asecond conductivity type extending substantially parallely to each other and sourceregions (14;140) of the first conductivity type. A conductive gate layer (17;170) is

insulatively disposed over the semiconductor material layer (3) between the body stripes(9;90). A mesh (4;40) of the second conductivity type is formed in the semiconductormaterial layer (3) and comprises an annular frame region (5;50) surrounding the pluralityof body stripes (9;90) and at least one first elongated stripe (7;60) extending within theannular frame region (5;50) in a direction substantially orthogonal to the body stripes(9;90) and merged with the annular frame region (5;50), the body stripes (9;90) beingdivided by the first elongated stripe (7;60) in two respective groups and being mergedwith the mesh (4;40). A conductive gate finger (25;250) connected to said conductive gatelayer (17;170) insulatively extends over the first elongated stripe (7;60). Source metalplates (20;200) are provided covering each group of parallel body stripes and contacting

each body stripe of the group. The conductive gate finger (25;250) is covered andcontacted by a respective metal gate finger (27;270).

申请人：ST MICROELECTRONICS SRL,CONS RIC MICROELETTRONICA

地址：IT,IT

国籍：IT,IT

代理机构：Mittler, Enrico

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