BU406TU资料

BU406/406H/408BU406/406H/408High Voltage Switching •Use In Horizontal Deflection Output Stage1TO-2201.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise notedSymbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage TemperatureParameterValue400200 6 7 10 4 60150- 55 ~ 150UnitsVVVAAAW°C°CElectrical Characteristics TC=25°C unless otherwise notedSymbol ICESParameter Collector Cut-off Current Test Condition VCE = 400V, VBE = 0 VCE = 250V, VBE = 0 VCE = 250V, VBE = 0 @ TC=150°C VBE = 6V, IC = 0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A IC = 6A, IB = 1.2A VCE = 10V, IC = 0.5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A100.750.40.4Min.Max.5100111111.21.21.5UnitsmAµAmAmAVVVVVVMHzµsµsµs IEBO VCE(sat) Emitter Cut-off Current Collector-Emitter Saturation Voltage: BU406: BU406H: BU408 Base-Emitter Saturation Voltage: BU406: BU406H: BU408 Current Gain Bandwidth Product Turn OFF Time: BU406: BU406H: BU408 VBE(sat) fT tOFF©2000 Fairchild Semiconductor InternationalRev. A, February 2000

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BU406/406H/408Typical Characteristics5 A00mIB = 2mA18060mAIB = IB = 11000IC[A], COLLECTOR CURRENT4mAIB = 140mA 1IB =20VCE = 5VhFE, DC CURRENT GAIN0mAIB = 10mAIB = 80IB = 60mAmA3100IB = 402IB = 20mA11000123456789101110100100010000VCE[V], COLLECTOR-EMITTER VOLTAGEIC[mA], COLLECTOR CURRENTFigure 1. Static CharacteristicFigure 2. DC current GainVCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE 100001000 IC = 10 IBf = 1MHz 1000VBE(sat)Cob [pF], CAPACITANCE100 10010VCE(sat)101110100100010000110100IC[mA], COLLECTOR CURRENTVCB[V], COLLECTOR-BASE VOLTAGEFigure 3. Base-Emitter Saturation VoltageCollector-Emitter Saturation VoltageFigure 4. Collector Output Capacitance 8070IC[A], COLLECTOR CURRENTPD [W], POWER DISSIPATIOANIC Max. (Pulsed)1060IC Max. (Continuous)504030120VCE MAX.1000.111010002550o75100125150175200VCE[V], COLLECTOR-EMITTER VOLTAGETC[C], CASE TEMPERATUREFigure 5. Safe Operating AreaFigure 6. Power Derating©2000 Fairchild Semiconductor InternationalRev. A, February 2000 s1msm10s0m10itedmLin ioatipssDiditeimb LS/元器件交易网www.cecb2b.com

BU406/406H/408Typical Characteristics (Continued)

Figure 7. Static CharacteristicFigure 8. DC current Gain

©2000 Fairchild Semiconductor InternationalRev. A, February 2000

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BU406/406H/408Package DemensionsTO-2209.90 ±0.201.30 ±0.102.80 ±0.104.50 ±0.20(8.70)ø3.60 ±0.10(1.70)1.30–0.05+0.109.20 ±0.20(1.46)13.08 ±0.20(1.00)(3.00)15.90 ±0.201.27 ±0.101.52 ±0.100.80 ±0.102.54TYP[2.54 ±0.20]2.54TYP[2.54 ±0.20]10.08 ±0.3018.95MAX.(3.70)(45°)0.50–0.05+0.102.40 ±0.2010.00 ±0.20Dimensions in Millimeters©2000 Fairchild Semiconductor International

Rev. A, February 2000

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PRODUCT STATUS DEFINITIONSDefinition of Terms

Datasheet IdentificationAdvance Information

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Definition

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

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©2000 Fairchild Semiconductor InternationalRev. E