CHARGE PUMP AND METHOD OF BIASING DEEP N-WELL IN C

专利名称：CHARGE PUMP AND METHOD OF BIASING

DEEP N-WELL IN CHARGE PUMP

发明人：Yvonne LIN,Tien-Chun YANG申请号：US13015906申请日：20110128

公开号：US20120194263A1公开日：20120802

专利附图：

摘要：A charge pump has at least one charge pump stage. Each charge pump stageincludes at least one NMOS device. The at least one NMOS device has a deep N-well(DNW), and is coupled to at least one capacitor, an input node, and an output node. The

input node is arranged to receive an input signal. The at least one capacitor is arranged tostore electrical charges. The charge pump stage is configured to supply the electricalcharges to the output node, and the DNW is arranged to float for a positive pumpoperation.

申请人：Yvonne LIN,Tien-Chun YANG

地址：Saratoga CA US,San Jose CA US

国籍：US,US

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