专利名称：Electrode assembly for a semiconductor
device
发明人：Hisayoshi Fujikawa,Koji Noda,Takeshi
Ohwaki,Yasunori Taga
申请号：US07/994913申请日：19921222公开号：US05306950A公开日：19940426
摘要：An electrode assembly for a semiconductor device includes a contact layerformed on a semiconductor substrate and consisting mainly of a rare- earth metal ormetals, or a silicide thereof, or a mixture thereof, and a diffusion barrier layer formed onthe contact layer and consisting mainly of iron or an iron alloy. The assembly is bondedto a mount by a solder layer formed on the diffusion barrier layer and consisting mainlyof lead and tin.
申请人：KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
代理机构：Oblon, Spivak, McClelland, Maier & Neustadt
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容