专利名称：Process for strengthening semiconductor
substrates following thinning
发明人：James M. Derderian,Nathan R. Draney申请号：US10981073申请日：20041104公开号：US07056812B2公开日：20060606
专利附图：
摘要：A semiconductor wafer having a high degree of thinness and exhibiting anenhanced strength state. A layer of tenacious reinforcement material is disposed over aback side of the wafer while in a rough state from backgrinding without prior,conventional polishing or plasma etching of the back side. The thin layer or film ofreinforcement material fills grooves, fractures and scratches in the back side of the wafer,enhance the rigidity of the wafer and provide a planar, smooth, back side surface layer.The reinforcement material counteracts internal stresses of the wafer tending to warp,crack and propagate lattice defects in the wafer. The reinforcement material may also beconfigured to act as a die attach adhesive, may provide an ionic barrier, and may remain aspart of the packaging for semiconductor dice singulated from the wafer.
申请人：James M. Derderian,Nathan R. Draney
地址：Boise ID US,Boise ID US
国籍：US,US
代理机构：TraskBritt
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